Multiscale Materials Lab
Wooyoung Shim RESEARCH GROUP
RESEARCH
Two-dimensional III-V & IV Semiconductors
Our research group focuses on developing novel III-V and IV semiconductor materials with previously unknown crystal structures and investigating their unique properties. These semiconductors not only exhibit excellent semiconductor characteristics but also possess functionalities that allow for ion control, enabling multiple states. Their van der Waals structures are expected to reveal new properties not observed in traditional III-V or IV semiconductors. These materials hold promise as next-generation semiconductors for in-memory computing and neuromorphic computing, offering excellent compatibility with Si-technology and positioning themselves as promising post-Si materials.
Two-dimensional Metals
We develop new metallic materials by creating layered structures from metals that typically have three-dimensional bonding, resulting in van der Waals (vdW) bonding. This vdW structure allows for precise control of the crystal structure at the unit cell level and facilitates easy control of microstructures such as grain orientation and grain boundaries. Consequently, we can manipulate not only the chemical properties and electrical conductivity of the metallic materials but also their physical properties. These materials have potential applications in electromagnetic wave shielding, metal catalysts, and switch devices.
Two-dimensional Membranes & Insulators
Two-dimensional materials possess vdW gaps that provide sufficient physical space for ion movement. In the presence of driving forces such as chemical potential differences, thermal gradients, or electric fields, these membranes can facilitate ion movement. This capability allows for selective ion transport, making them suitable for applications in power generation, water purification, and resource extraction through ion sieving, among other energy and environmental applications.
Parallel Nanofabrication & Nanoimaging
In nanofabrication and imaging, resolution and large-area scalability are often complementary. Our group focuses on optimizing processes to maintain the advantages of large-area parallel fabrication while enhancing resolution. We are working on improving the resolution of photolithography and increasing the scalability of scanning probes without compromising their high resolution. These advancements enable the fabrication of various nanodevices and the development of next-generation electronic devices.
